MUR1100E |
RFQ for MUR1100E Required Field |
 |
| Technical/Catalog Information | MUR1100EG |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.75V @ 1A |
| Reverse Recovery Time (trr) | 100ns |
| Current - Reverse Leakage @ Vr | 10A @ 1000V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Axial |
| Package / Case | DO-41, Axial |
| Packaging | Bulk |
| Capacitance @ Vr, F | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MUR1100EG MUR1100EG MUR1100EGOS ND MUR1100EGOSND MUR1100EGOS |
| Product | Manufacturers | Pack | D/C |
| MUR1100E | - | DO-41 | 06+ |
Features |
| • 10 mjoules Avalanche Energy Guaranteed• Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits• Ultrafast 75 Nanosecond Recovery Time• 175°C Operating Junction Temperature• Low Forward Voltage• Low Leakage Current• High Temperature Glass Passivated Junction• Reverse Voltage to 1000 Volts |
|
Rating |
Symbol |
Value |
Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR180E MUR1100E |
VRRM VRWM VR |
800 1000 |
V |
| Average Rectified Forward Current (Note 1.) (Square Wave Mounting Method #3 Per Note 3.) |
IF(AV) |
1.0 @ TA = 95°C |
A |
| Non-Repetitive Peak Surge Current (Surge applied at rated load conditions,halfwave, single phase, 60 Hz) |
IFSM |
35 |
A |
| Operating Junction Temperature and Storage Temperature Range |
TJ, Tstg |
65 to+175 |
°C |
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